IGZO GATE ELECTRODE DRIVE CIRCUIT BASED ON IGZO PROCESS

摘要

In a gate electrode driving circuit based on an IGZO process including a plurality of cascaded GOA units, the Nth stage GOA unit includes a pull-up control circuit 100, a pull-up circuit 200, a downward transfer circuit 300, A pull-down circuit 400, a pull-down holding circuit 500 and a booster circuit 600 and also applies a first negative potential VSS1, a second negative potential VSS2 and a third negative potential VSS3, The three negative potentials are sequentially decremented and output to the output terminal G (N), the first node Q (N), the second node P (N), and the drive signal terminal ST (N) Pull-down process is performed to effectively prevent the leakage problem of the special TFT of the circuit. In the gate electrode driving circuit based on the IGZO process, the channel of the TFT switch is an oxide semiconductor channel.