III-N GROUP III-N TRANSISTORS ON NANOSCALE TEMPLATE STRUCTURES

摘要

III-N channel semiconductors are formed in the III-N wars that (111) of silicon structure structure structure or (110) surface are formed just as the wall of safety pin. In real-time example, silicon safety pin allows the Special Film thickness and width with III-N, reduces lower defect concentration and/or special film for the examination layer of better conforming to property. In real-time example, turning layer is GaN, and channel semiconductor is to increase from silicon steel and increase the offside element of full island team. Other implement example in, hair fastener with sacrifice use or eliminate or oxidation or other in the case of, manufacture transistor during, fluidic structures can be converted to. In the information using sacrifice safety pin, III-N transfers and channel semiconductor are substantially pure GaN, therefore, allow the cooling voltage supported in the presence of silicic acid.