ICP POWER DEPOSITION CONTROL IN INDUCTIVELY COUPLED PLASMA ICP REACTORS

摘要

Embodiments of inductively coupled plasma (ICP) reactors are provided herein. In some embodiments, the dielectric window for an inductively coupled plasma reactor comprises a body comprising: a first side, a second side opposite the first side, an edge, and a center, the dielectric window comprising a spatially varying dielectric Coefficient. In some embodiments, an apparatus for processing a substrate includes: a process chamber having a processing volume disposed beneath a lid of the process chamber; And one or more induction coils disposed above the lid to inductively couple RF energy into a processing volume on a substrate support disposed within the processing volume and to form a plasma in the processing volume, 1 / RTI side and an opposite second side facing the processing volume, the lid being adapted to provide varying power coupling to the processing volume of RF energy from one or more induction coils And has a spatially varying dielectric constant.