首页> 外国专利> CuSCN Hole transporting material layer comprising copper thiocyanateCuSCN and preparation method thereof

CuSCN Hole transporting material layer comprising copper thiocyanateCuSCN and preparation method thereof

机译:含硫氰酸铜CuSCN的空穴传输材料层及其制备方法

摘要

The present invention relates to a layer of a thiocyanate copper (CuSCN) hole transporting material and a method of manufacturing the same, and a method of manufacturing a layer of a thiocyanate copper (CuSCN) hole transporting material of the present invention comprises: It is possible to solve the problem of high cost and low device stability generated when a conventional polymer material is manufactured into a hole transporting material layer by using the hole transporting material as a transporting material and to produce a hole transporting layer by an aerosol spraying method, A high efficiency perovskite solar cell capable of forming a photovoltaic layer, a photoelectric conversion efficiency, a large area, and a continuous process can be manufactured at a lower cost.
机译:本发明涉及一种硫氰酸盐铜(CuSCN)空穴传输材料层及其制造方法,以及本发明的硫氰酸盐铜(CuSCN)空穴传输材料层的制造方法,包括:可以解决通过使用空穴传输材料作为传输材料将常规聚合物材料制造为空穴传输材料层时产生的高成本和低设备稳定性的问题,并且可以通过气溶胶喷涂法制造空穴传输层,A能够以较低的成本制造能够形成光电层的高效钙钛矿太阳能电池,光电转换效率,大面积和连续工艺。

著录项

  • 公开/公告号KR101985996B1

    专利类型

  • 公开/公告日2019-06-05

    原文格式PDF

  • 申请/专利权人 인하대학교 산학협력단;

    申请/专利号KR20160028698

  • 发明设计人 양인석;이완인;

    申请日2016-03-10

  • 分类号H01G9/20;H01L31/0216;H01L31/18;

  • 国家 KR

  • 入库时间 2022-08-21 11:48:26

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