RF PLASMA PROCESSING CHAMBER WITH FLEXIBLE SYMMETRIC RF RETURN STRAP

摘要

Chambers are provided for processing semiconductor wafers. One such chamber includes an electrostatic chuck having a surface for supporting a substrate. A grounding assembly is provided to surround the periphery of the electrostatic chuck. The grounding assembly includes a first annular portion and a second annular portion and a space between the first annular portion and the second annular portion. There is provided a conductive strap having flexibility. The conductive strap is annular and has a curved cross-sectional shape having a first end and a second end. The conductive strap is disposed in space such that the first end is electrically connected to the first annular portion and the second end is electrically connected to the second annular portion. The curved cross-sectional shape has an opening away from the electrostatic chuck when the annular conductive strap is in space.