首页> 外国专利> METHOD AND APPARATUS OF POLISHING SINGLE-SIDE OF SINGLE SEMICONDUCTOR WAFER

METHOD AND APPARATUS OF POLISHING SINGLE-SIDE OF SINGLE SEMICONDUCTOR WAFER

机译:抛光单晶片晶圆单面的方法和装置

摘要

(Problem) Provided is a single-sided single-side polishing method and a single-sided single-side polishing apparatus capable of increasing flatness of a semiconductor wafer and suppressing variations in flatness. (Solving means) The single wafer polishing method of the semiconductor wafer of the present invention includes a polishing step of pressing the semiconductor wafer 1 held by the polishing head 120 with the surface plate 140 to polish the semiconductor wafer 1; The semiconductor wafer 1 held by the polishing head 120 is conveyed from the surface plate 140 onto the tray 190 outside the surface plate, and then the semiconductor wafer 1 is separated from the polishing head 120, thereby leaving the tray 190. ), The relative position of the mounted semiconductor wafer 1 and the polishing head 120 is moved in the rotational direction of the polishing head 120, and then the placed semiconductor wafer 1 is placed thereon. ) A positioning step of holding by the polishing head 120, wherein the polishing step is performed a plurality of times, and the positioning step is performed at least one time during the plurality of polishing steps.
机译:(问题)提供一种单面单面抛光方法和单面单面抛光设备,其能够增加半导体晶片的平坦度并抑制平坦度的变化。 (解决手段)本发明的半导体晶片的单晶片研磨方法包括以下研磨工序:将被研磨头120保持的半导体晶片1用平台140按压,对半导体晶片1进行研磨。将由抛光头120保持的半导体晶片1从平台140传送到平台外部的托盘190上,然后将半导体晶片1与抛光头120分离,从而留下托盘190。使已安装的半导体晶片1和抛光头120的位置沿抛光头120的旋转方向移动,然后将放置的半导体晶片1放置在其上。 )由抛光头120保持的定位步骤,其中,抛光步骤被执行多次,并且在多个抛光步骤中,定位步骤被执行至少一次。

著录项

  • 公开/公告号KR102041240B1

    专利类型

  • 公开/公告日2019-11-06

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20170065012

  • 发明设计人 가와사키 토모노리;

    申请日2017-05-26

  • 分类号H01L21/304;H01L21/306;H01L21/461;H01L21/67;

  • 国家 KR

  • 入库时间 2022-08-21 11:47:27

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号