首页> 外国专利> METHOD OF PRODUCING CONTROLLED GLASS/δ*-Bi2O3+Bi2SiO5 HETEROSTRUCTURE IN SYSTEM Bi2O3-SiO2 (VERSIONS)

METHOD OF PRODUCING CONTROLLED GLASS/δ*-Bi2O3+Bi2SiO5 HETEROSTRUCTURE IN SYSTEM Bi2O3-SiO2 (VERSIONS)

机译:在Bi系统中制备受控玻璃/δ* -Bi 2 O 3 + Bi 2 SiO 5 异质结构的方法 2 O 3 -SiO 2 (版本)

摘要

FIELD: chemistry.;SUBSTANCE: invention relates to chemistry and can be used as a superionic conductor with a protective layer and a photocatalyst with controlled activity and a protective layer. Method of producing controlled heterostructure Glass/δ*-Bi2O3+Bi2SiO5 includes preliminary mechanical mixing of initial powders, placing them into a platinum crucible, heating to 1,047 °C±20 °C–1,230±20 °C, holding for not less than 15 minutes with further cooling at rate of 3–100 °C/c (first version) or cooling at free speed, without removing from furnace, up to 1,020°C±20 °C–1,047±20 °C, holding for at least 15 minutes and cooling at rate of 3–1,000 °C/s (second version).;EFFECT: invention enables to form two-layer heterostructures (consisting of two types of crystals – δ*-Bi2O3 and Bi2SiO5 and glass) without extraneous impurity phases and contaminants using simple heat treatment, which significantly reduces not only time, but also economic costs for production and enables to easily and simply create material with already specified process properties, changing both ratio between crystalline phases themselves, and "crystal/glass" ratio.;2 cl, 9 dwg
机译:技术领域本发明涉及化学并且可以用作具有保护层和具有受控活性的光催化剂以及保护层的超离子导体。制备受控异质结构Glass /δ* -Bi 2 O 3 + Bi 2 SiO 5 的方法包括初步的机械方法混合初始粉末,将其放入铂制坩埚中,加热至1,047°C±20°C–1,230±20°C,保持不少于15分钟,并以3-100°C / c的速率进一步冷却(第一次版本)或在没有从炉中取出的情况下以自由速度冷却,最高可达1,020°C±20°C–1,047±20°C,保持至少15分钟并以3–1,000°C / s的速率冷却(第二种版本)效果:发明能够形成两层异质结构(由两种类型的晶体组成-δ* -Bi 2 O 3 和Bi 2 SiO 5 和玻璃),无需使用简单的热处理即可去除多余的杂质相和污染物,这不仅显着减少了时间,而且还降低了生产的经济成本,并能够轻松,简单地通过已指定的工艺制造材料特性,改变晶相之间的两个比率;“水晶/玻璃”比例; 2 cl,9 dwg

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