Memory cell based on the spin-hall effect

摘要

A memory cell (200) comprising: a silicon substrate (280); a metal layer (230, 330, 430, 530, 630, 730) on the silicon substrate (280), the metal layer (230, 330, 430, 530, 630, 730 ) is adapted to be coupled to a second memory cell via a scanning line (206, 207, 406, 506, 606, 706), a ferromagnetic layer (225, 325, 425, 525, 625, 725) which covers the metal layer (230 , 330, 430, 530, 630, 730); a select transistor (220, 320, 420, 520, 620, 720) on the silicon substrate (280) adjacent to the metal layer (230, 330, 430, 530, 630, 730), the selection transistor (220, 320, 420, 520, 620, 720) coupling the metal layer (230, 330, 430, 530, 630, 730) to GND; anda second transistor (760) configured to couple a read line (204, 404, 504, 604) of the second memory cell to the ferromagnetic layer (225, 325, 425, 425, 525, 625, 725) when mounted on the Memory cell (200) a read operation is performed.