Processing method of a silicon-on-insulator structure for reducing light-point defects and surface roughness

摘要

A method of processing a silicon-on-insulator structure (1) comprising a handle wafer (4), a silicon layer (2) and a dielectric layer (3) between the handle wafer (4) and the silicon Layer (4), wherein the silicon layer (2) has a cleavage surface defining an outer surface of the structure, the method comprising: thermally annealing the silicon-on-insulator structure (1) in an environment comprising a gas mixture of argon and hydrogen, at a temperature of at least about 950 ° C for a period of about 15 minutes to about 10 hours, the environment containing less than about 10 ppm oxygen; andperforming a non-contact smoothing operation on the cleavage surface, wherein the thermal anneal reduces the surface roughness of the silicon layer (2), densifies the dielectric layer (3), strengthens the bond between the silicon layer (2), and the Dielectric layer (3), and the reduction of light-spot defects on the cleavage surface is used.