widerstandsbasierte speichervorrichtung,method for the manufacture of a widerstandsbasierten speichervorrichtung and procedures for setting a widerstandsbasierten speicherzelle to a predefined zellenwert

摘要

in various forms is a widerstandsbasierte speichervorrichtung provided.the number of electrically programmable memory cells speichervorrichtung can containeach of the multiple memory cells speicherzelle several widerstandsbasierte memory can containeach speicherelement from several widerstandsbasierten memories a first electrodea second electrode and a resistives material between the first electrode and the second electrode containsin each of a first electrode and a first speicherzelle speicherelements from several memories with a first port, which is configureda first voltage to electrically connect.the several memory in series by the respective electrical connections between a second electrode of each of the multiple memories and a first electrode of a nachfolgenden speicherelements from several memories are electrically connected.and a second electrode of a speicherelements from several memories with a second connector, which is configured to provide a second voltage.electrically connect.