首页> 外国专利> OPTICAL PICTORIAL STUDENTS FOR THE RECORDING OF TWO-DIMENSIONAL IMAGES IN THE NEAR INFRARED RANGE

OPTICAL PICTORIAL STUDENTS FOR THE RECORDING OF TWO-DIMENSIONAL IMAGES IN THE NEAR INFRARED RANGE

机译:在近红外范围内记录二维图像的光学照相学生

摘要

An optical image sensor for taking two-dimensional images in the near infrared range, comprising a photocathode (2) having a photon (PH) entrance surface (6) with an electron exit surface (7) parallel to the entrance surface (6) a layer arrangement (8) which is arranged between the entry surface (6) and the exit surface (7) and which is configured such that the photon (PH) entering through the entry surface (6) exits the exit surface (7) of the electron (EL). causes, wherein an exit position (AP) of the electron (EL) at the exit surface (7) with an entry position (EP) of the photon (PH) at the entrance surface (6) corresponds; anda single photon avalanche photodiode device (9) comprising a single photon avalanche photodiode array (10) having a plurality of two-dimensionally arranged single photon avalanche photodiodes (11), the single photon avalanche photodiode device (11) 9) is arranged with respect to the photocathode (2) such that the electron (EL), after exiting the exit surface (7) of the photocathode (2), strikes the single-photon avalanche photodiode array (10) Impact position (AFP) of the electron (EL) on the single-photon avalanche photodiode array (10) by means of the plurality of two-dimensionally arranged single-photon avalanche photodiodes (11) is detectable, so as to generate an image signal (BS); optical image sensor (1) for receiving two-dimensional images in a wavelength range having wavelengths of at least 1.4 microns is formed.
机译:一种用于在近红外范围内拍摄二维图像的光学图像传感器,包括具有光子(PH)入射面(6)和平行于入射面(6)的电子出射面(7)的光电阴极(2)a。层结构(8)布置在入射表面(6)和出射表面(7)之间,并且构造成使得通过入射表面(6)进入的光子(PH)从玻璃层的出射表面(7)出射。电子(EL)。原因,其中,电子(EL)在出射面(7)的出射位置(AP)与光子(PH)在入射面(6)的出射位置(EP)相对应;以及包括具有多个二维布置的单光子雪崩光电二极管(11)的单光子雪崩光电二极管阵列(10)的单光子雪崩光电二极管器件(9),该单光子雪崩光电二极管器件(11)9)被布置。到光电阴极(2)上,这样电子(EL)在离开光电阴极(2)的出射表面(7)后撞击单光子雪崩光电二极管阵列(10)。电子(EL)的撞击位置(AFP) )在单光子雪崩光电二极管阵列(10)上借助于多个二维排列的单光子雪崩光电二极管(11)是可检测的,从而产生图像信号(BS);形成用于接收波长为至少1.4微米的波长范围内的二维图像的光学图像传感器(1)。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号