首页> 外国专利> IMPROVED MANUFACTURING METHOD OF OPTICAL DETECTOR BASED ON PHOTODIODES AND DEVICE THEREFOR

IMPROVED MANUFACTURING METHOD OF OPTICAL DETECTOR BASED ON PHOTODIODES AND DEVICE THEREFOR

机译:基于光电二极管的光电探测器的改进制造方法及其装置

摘要

The invention relates to a method of manufacturing (700) a hybrid type optical detector comprising the steps of: assembling (100) by an assembly layer (11) on the one hand an absorbing structure (Sabs) and on the other hand a reading circuit (ROIC), -gravating (200) locally through the absorbing structure, the assembly layer and the reading circuit to the contacts, so as to form interconnection holes (IH) electrical, -drop (300) a protective layer (PL, PLsca, PLd, PLscna, PLsc0) on the walls of the vias -réaliser (400) a doped zone (DZ) of a second type of doping different from the first type of dopant diffusion doping (Dop) in the absorbent structure through said protective layer, said zone extending annularly around said vias (IH) so as to constitute a diode (PhD), -drop (500) a metallization layer (ML) on the walls vias (IH) for electrically connecting the doped zone (DZ) with the contact (TLC).
机译:本发明涉及一种制造(700)混合型光学探测器的方法,该方法包括以下步骤:一方面通过组装层(11)组装(100)吸收结构(Sabs),另一方面利用读取电路(ROIC),通过吸收结构,组件层和读取电路局部地将(200)刻在触点上,以形成互连孔(IH),电(300)保护层(PL,PLsca,在通孔的壁上的PLd,PLscna,PLsc0-区域隔离器(400)是第二种类型的掺杂的掺杂区(DZ),其不同于所述吸收层中通过所述保护层的第一类掺杂剂扩散掺杂(Dop),所述区域围绕所述通孔(IH)环形地延伸,以构成二极管(PhD),在壁通孔(IH)上滴入(500)金属化层(ML),以将掺杂区(DZ)与触点电连接(TLC)。

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