METHOD OF MAKING MESH-LINKED HETERO-EPITAXIAL JUNCTIONS COMPRISING A P-TYPE DELAFOSSITE CRYSTALLINE THIN LAYER ON A N-TYPE ZNO CRYSTALLINE SUBSTRATE

摘要

A method of manufacturing a heterojunction comprising at least one epitaxial layer of a hexagonal p-type copper delafossite on an n-type zinc oxide substrate, the method of Being performed by deposition of said delafossite on said substrate, characterized in that said deposition is performed by pulsed laser ablation of at least one delafossite target. Inside an enclosure in which molecular or atomic oxygen is introduced, so as to improve the mesh agreement between said substrate and said epitaxial layer. Hjunction consisting of at least one layer of a p-type copper delafossite with excess oxygen on an n-type zinc oxide substrate, said delafossite and said substrate having the same structure crystalline and exhibiting a mesh parameter agreement. Electroluminescent diode comprising such a heterojunction and possibly able to emit white light.