METHOD FOR MANUFACTURING A PHOTOVOLTAIC OR PHOTO-DETECTOR DEVICE WITH ELECTRONIC JUNCTION N-PERT AND PHOTOVOLTAIC DEVICE OR PHOTO-DETECTOR WITH ELECTRONIC JUNCTION

摘要

The invention relates to a method for manufacturing a n-PERT electronic junction photovoltaic or photodetector device or to a solar panel based on n-PERT photovoltaic devices. According to the invention, the method comprises the following steps: a) texturing at least one face of a substrate (4) of n-doped crystalline silicon to generate a micro-textured surface, the micro-textured surface comprising micro-textured textures; b) following step a), diffusion of boron in the crystalline silicon substrate through the micro-textured surface to generate a layer (3) of doped silicon, the layer (3) of p-doped silicon forming a transmitter of the electronic junction; and c) following step b), etching the micro-textured surface to remove a surface thickness of the p-doped silicon layer (3) and to generate a micro-textured and nano-textured surface at the surface of the layer (3) of p-doped silicon forming the emitter.