METHOD FOR MANUFACTURING A PHOTOVOLTAIC DEVICE OR PHOTO-DETECTOR WITH N-PERT ELECTRONIC JUNCTION AND PHOTOVOLTAIC DEVICE OR PHOTO-DETECTOR WITH ELECTRONIC JUNCTION

摘要

The invention relates to a method of manufacturing a photovoltaic device or photo-detector with electronic junction n-PERT or a solar panel based on n-PERT photovoltaic devices. According to the invention, the method comprises the following steps: a) texturing at least one face of a substrate (4) of n-doped crystalline silicon to generate a micro-textured surface, the micro-textured surface comprising micro- textures; b) following step a), diffusion of boron into the crystalline silicon substrate through the micro-textured surface to generate a layer (3) of doped silicon, the layer (3) of p-doped silicon forming an emitter of the electronic junction; and c) following step b), etching the micro-textured surface to remove a surface thickness of the layer (3) of p-doped silicon and to generate a micro-textured and nano-textured surface on the surface of the p-doped silicon layer (3) forming the emitter.