WRITING AND VERIFYING CIRCUIT AND METHOD FOR WRITING AND VERIFYING RESISTIVE MEMORY THEREOF

摘要

A writing and verifying circuit and a method for writing and verifying a resistive memory thereof are provided. The steps of the method includes: enabling one word line signal corresponding to one selected resistive memory cell of the resistive memory during a writing and verifying timing period; providing a bit line voltage to the selected resistive memory cells, wherein the bit line voltage continuously increases or decreases from a first voltage level to a second voltage level during the writing and verifying timing period; and, measuring a detected current through the bit line and determining a finish time point of the writing and verifying timing period according to the detected current and a reference current.