首页> 外国专利> MICRORELIEF STRUCTURE FOR LIGHT EMITTING ELEMENT, AND LIGHT EMITTING ELEMENT AND ILLUMINATION DEVICE USING SAID MICRORELIEF STRUCTURE

MICRORELIEF STRUCTURE FOR LIGHT EMITTING ELEMENT, AND LIGHT EMITTING ELEMENT AND ILLUMINATION DEVICE USING SAID MICRORELIEF STRUCTURE

机译:用于发光元件的微细结构以及使用所述微细结构的发光元件和照明装置

摘要

Provided is a microstructure for electroluminescent (EL) elements which has superior light extraction efficiency. The microstructure for EL elements comprises a plurality of microconvexities (a) having circular bottom surfaces (p). Each microconvexity (a) has a peak (q) on a perpendicular line from the centre of the circular bottom surface (p), and is defined by a generatrix dropped from the peak (q) to the circumference of the bottom surface (p). The height of the generatrix of each convexity (a) is monotonically reduced from the peak (q) to the circumference of the bottom surface (p). The height of the peaks (q) of the convexities (a) is 0.67-1.15 times the radius of the bottom surfaces (p). The height of the convexities (a) at the position on the radius of the bottom surface (p) 3/4 away from the centre of the bottom surface (p) is 0.21-0.65 times the radius of the bottom surface (p). The height of the convexities (a) at the position on the radius of the bottom surface (p) 9/10 away from the centre of the bottom surface (p) is 0.04-0.38 times the radius of the bottom surface (p).
机译:提供了具有优异的光提取效率的用于电致发光(EL)元件的微结构。 EL元件的微结构包括具有圆形底表面(p)的多个微凸面(a)。每个微凸度(a)在从圆形底表面(p)的中心垂直的直线上都有一个峰(q),并且由从峰(q)到底表面圆周(p)的母线定义。 。每个凸部的母线高度(a)从峰(q)到底表面(p)的圆周单调减小。凸部(a)的峰(q)的高度是底面半径(p)的半径的0.67-1.15倍。底面半径(p)上距底面(p)的中心3/4的位置处的凸部(a)的高度是底面半径(p)的0.21-0.65倍。底面半径(p)上距底面(p)的中心9/10处的凸部(a)的高度是底面半径(p)的0.04-0.38倍。

著录项

  • 公开/公告号EP2658344B1

    专利类型

  • 公开/公告日2020-02-26

    原文格式PDF

  • 申请/专利权人 KIMOTO CO. LTD.;

    申请/专利号EP20110852034

  • 发明设计人 ETORI HIDEKI;

    申请日2011-12-20

  • 分类号H05B33/02;G02B5/02;H01L51/52;G02B1/118;

  • 国家 EP

  • 入库时间 2022-08-21 11:41:58

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