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DIFFERENTIAL AMPLIFIER WITH COMPLEMENTARY UNIT STRUCTURE

机译:具有互补单元结构的差分放大器

摘要

Certain aspects of the present disclosure generally relate to a differential amplifier implemented using a complementary metal-oxide-semiconductor (CMOS) structure. The differential amplifier generally includes a first pair of transistors and a second pair of transistors coupled to the first pair of transistors. The gates of the first pair of transistors and gates of the second pair of transistors may be coupled to respective differential input nodes of the differential amplifier, and drains of the first pair of transistors and drains of the second pair of transistors may be coupled to respective differential output nodes of the differential amplifier. In certain aspects, the differential amplifier may include a biasing transistor having a drain coupled to a source of a transistor of the first pair of transistors and having a gate coupled to a common-mode feedback (CMFB) path of the differential amplifier.
机译:本公开的某些方面通常涉及使用互补金属氧化物半导体(CMOS)结构实现的差分放大器。差分放大器通常包括第一对晶体管和耦合到第一对晶体管的第二对晶体管。第一对晶体管的栅极和第二对晶体管的栅极可以耦合到差分放大器的相应的差分输入节点,并且第一对晶体管的漏极和第二对晶体管的漏极可以耦合到各自。差分放大器的差分输出节点。在某些方面,差分放大器可以包括偏置晶体管,该偏置晶体管的漏极耦合到第一对晶体管的晶体管的源极,并且其栅极耦合到差分放大器的共模反馈(CMFB)路径。

著录项

  • 公开/公告号EP3732782A1

    专利类型

  • 公开/公告日2020-11-04

    原文格式PDF

  • 申请/专利权人 QUALCOMM INCORPORATED;

    申请/专利号EP20180837050

  • 发明设计人 KARMAKER RAHUL;FAN BIN;

    申请日2018-12-21

  • 分类号H03F3/45;

  • 国家 EP

  • 入库时间 2022-08-21 11:39:55

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