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MRAM REFERENCE CELL WITH SHAPE ANISOTROPY TO ESTABLISH A WELL-DEFINED MAGNETIZATION ORIENTATION

机译:具有形状各向异性的MRAM参考单元可建立定义良好的磁化方向

摘要

An apparatus has a reference magnetic tunnel junction with a high aspect ratio including a reference layer with magnetization along a minor axis and a storage layer with magnetization along a major axis. The storage layer magnetization is substantially perpendicular to the magnetization along the minor axis. The magnetization orientation between the minor axis and the major axis is maintained by shape anisotropy caused by the high aspect ratio.
机译:一种设备,其具有高纵横比的参考磁隧道结,包括沿短轴磁化的参考层和沿长轴磁化的存储层。存储层的磁化强度基本上沿着短轴垂直于磁化强度。短轴和长轴之间的磁化取向通过高纵横比引起的形状各向异性得以保持。

著录项

  • 公开/公告号EP3580758A1

    专利类型

  • 公开/公告日2019-12-18

    原文格式PDF

  • 申请/专利权人 CROCUS TECHNOLOGY INC.;

    申请/专利号EP20180750830

  • 发明设计人 GAIDIS MICHAEL;TRAN THAO;

    申请日2018-02-07

  • 分类号G11C11/14;

  • 国家 EP

  • 入库时间 2022-08-21 11:39:21

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