Selective growth of silicon oxide or silicon nitride on silicon surface in the presence of silicon oxide

摘要

Methods and apparatus are provided herein for selectively depositing a silicon-containing dielectric or metal-containing dielectric material on a silicon or metal surface that is selective to silicon oxide or silicon nitride materials. . The method comprises exposing the substrate to an acyl chloride that reacts with the silicon oxide or silicon nitride material where vapor deposition is not desired to form a ketone structure that blocks deposition on the silicon oxide or silicon nitride material. The exposure to acyl chloride is carried out prior to the deposition of the desired silicon-containing or metal-containing dielectric material. [Selection diagram] FIG.