Method of manufacturing PIN diode set using trapezoidal active region of annular antenna capable of refactoring

摘要

The present invention relates to a method for manufacturing a PIN diode set using a trapezoidal active region of a ring antenna that can be refactored. The manufacturing method includes: (a) selecting an SOI pad; (b) forming a trapezoidal active region by etching the SOI pad; and (c) forming the trapezoidal active region by an in-situ doping process. Forming a P region and an N region by depositing a P-type Si material and an N-type material therearound; and (d) depositing the polycrystalline Si material around the trapezoidal active region by a CVD process. (E) forming a lead wire on the surface of the polycrystalline Si material and etching the PAD to form the PIN diode. In an embodiment of the present invention, the in-situ doping process is applied to manufacture a solid-state plasma antenna and manufactures a PIN diode set with a trapezoidal active region. [Selection] Figure 2