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Method for preparing sample for interface analysis and method for interface analysis

机译:用于界面分析的样品的制备方法和界面分析的方法

摘要

PROBLEM TO BE SOLVED: To provide a method capable of stably preparing a specimen having a metal layer and a resin layer laminated in contact with each other and suitable for the analysis of the vicinity of an interface between the metal layer and the resin layer by a hard X-ray photoelectron spectroscopy.SOLUTION: The preparation method of an interface analysis specimen includes: a step of preparing a gallium arsenic substrate 40 having a main surface 40A which has a surface roughness Ra of 10 nm or less; a step of forming a silicon dioxide layer 30 so that it contacts the main surface 40A; a step of forming a metal layer 10 having a thickness of 2 nm to 50 nm so that it contacts a main surface 30A of the silicon dioxide layer 30 opposite to the gallium arsenic substrate 40 side; a step of forming a first laminate 2 by forming a resin layer 20 so that it contacts a main surface 10A of the metal layer 10 opposite to the silicon dioxide layer 30 side; a step of acquiring a second laminate by removing the gallium arsenic substrate 40 from the first laminate 2; and a step of removing the silicon dioxide layer 30 from the second laminate.SELECTED DRAWING: Figure 3
机译:解决的问题:提供一种方法,该方法能够稳定地制备具有彼此接触层压的金属层和树脂层的样品,并且该方法适合于通过激光分析金属层和树脂层之间的界面附近。界面分析样品的制备方法包括:制备具有主表面40A的砷化镓衬底40的步骤,主表面40A的表面粗糙度Ra小于或等于10nm。形成二氧化硅层30以使其接触主表面40A的步骤;形成具有2nm至50nm的厚度的金属层10的步骤,以使其接触二氧化硅层30的与镓砷衬底40侧相对的主表面30A;通过形成树脂层20以使其与金属层10的与二氧化硅层30侧相反的主表面10A接触的方式形成第一层压体2的步骤;通过从第一层叠体2去除砷镓基板40来获得第二层叠体的步骤;以及从第二层压板去除二氧化硅层30的步骤。选图:图3

著录项

  • 公开/公告号JP6680143B2

    专利类型

  • 公开/公告日2020-04-15

    原文格式PDF

  • 申请/专利权人 住友電気工業株式会社;

    申请/专利号JP20160162237

  • 发明设计人 久保 優吾;斎藤 吉広;

    申请日2016-08-22

  • 分类号G01N1/28;G01N23/227;

  • 国家 JP

  • 入库时间 2022-08-21 11:34:05

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