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Method for measuring focus performance of lithographic apparatus, patterning device, metrology apparatus, lithographic system, computer program and device manufacturing method
Method for measuring focus performance of lithographic apparatus, patterning device, metrology apparatus, lithographic system, computer program and device manufacturing method
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机译:测量光刻设备的聚焦性能的方法,图案形成设备,计量设备,光刻系统,计算机程序和设备制造方法
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摘要
A lithographic apparatus (LA) prints product features and at least one focus metrology pattern (T) on a substrate. The focus metrology pattern is defined by a reflective reticle and printing is performed using EUV radiation (404) incident at an oblique angle (θ). The focus metrology pattern comprises a periodic array of groups of first features (422). A spacing (S1) between adjacent groups of first features is much greater than a dimension (CD) of the first features within each group. Due to the oblique illumination, the printed first features become distorted and/or displaced as a function of focus error. Second features 424 may be provided as a reference against which displacement of the first features may be seen. Measurement of this distortion and/or displacement may be by measuring asymmetry as a property of the printed pattern. Measurement can be done at longer wavelengths, for example in the range 350-800 nm.
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