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Method for removing precious metal-containing dissimilar metal multilayer film and method for recovering precious metal

机译:去除含有贵金属的异种金属多层膜的方法和回收贵金属的方法

摘要

PROBLEM TO BE SOLVED: To provide a removal method of an attachment of semiconductor production device parts, which can remove a multilayered film (attachment) where metal containing a plurality of kinds of precious metals attached to parts of a semiconductor production device are laminated in several tens of layers and which does not generate damage of a host material.SOLUTION: A removal method of precious metal-containing heterogeneous metal multilayered film includes a step of removing the precious metal-containing heterogeneous metal multilayered film attached to the semiconductor production device parts by wet etching, while dipping the semiconductor production device parts to which the precious metal-containing heterogeneous metal multilayered film containing a layer of a plurality of precious metals or precious metal alloys are adhered in an etching liquid that dissolves the precious metal, and also irradiating ultrasonic.SELECTED DRAWING: Figure 2
机译:解决的问题:提供一种去除半导体生产设备部件的附件的方法,该方法可以去除多层膜(附件),其中将附着在半导体生产设备部件上的包含多种贵金属的金属层压成多层。数十层且不会对主体材料造成损坏。解决方案:去除含贵金属的异质金属多层膜的方法包括以下步骤:通过以下方法去除附着在半导体生产设备部件上的含贵金属的异质金属多层膜:在湿法蚀刻的同时,将溶解有贵金属的蚀刻液浸渍在半导体制造装置的部件上,在该半导体生产装置的部件上粘贴有包含贵金属或贵金属合金的层的含有贵金属的异种金属多层膜,该蚀刻液使贵金属溶解并进行超声波照射。 .SELECTED DRAWING:图2

著录项

  • 公开/公告号JP6762867B2

    专利类型

  • 公开/公告日2020-09-30

    原文格式PDF

  • 申请/专利权人 株式会社新菱;

    申请/专利号JP20160249726

  • 发明设计人 田口 眞也;白濱 利基;諸岡 正和;

    申请日2016-12-22

  • 分类号C22B7;C22B11;C22B3/04;

  • 国家 JP

  • 入库时间 2022-08-21 11:33:30

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