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Wavelength tunable semiconductor laser array and method of controlling wavelength tunable semiconductor laser array

机译:波长可调半导体激光器阵列和控制波长可调半导体激光器阵列的方法

摘要

PROBLEM TO BE SOLVED: To minimize the impact of an active layer portion where temperature variation increases when performing wavelength changeover operation.SOLUTION: In a variable wavelength semiconductor laser array where multiple variable wavelength semiconductor lasers, having such a structure that one or more active layers and control layers are arranged in the propagation direction of light, are arranged, and arrangement of the active layers and control layers of adjoining variable wavelength semiconductor lasers is reversed, when the variable wavelength semiconductor laser to be driven is changed over from a first variable wavelength semiconductor laser to a second variable wavelength semiconductor laser, current is injected into the control layer of a third variable wavelength semiconductor laser (and fourth variable wavelength semiconductor laser) adjoining the second variable wavelength semiconductor laser, during operation of the first variable wavelength semiconductor laser, and current injection into the control layer of the third (and fourth) variable wavelength semiconductor laser is stopped simultaneously with driving of the second variable wavelength semiconductor laser.SELECTED DRAWING: Figure 2
机译:解决的问题:在进行波长转换操作时,将温度变化增加的有源层部分的影响降到最低。解决方案:在可变波长半导体激光器阵列中,多个可变波长半导体激光器具有一个或多个有源层的结构当要驱动的可变波长半导体激光器从第一可变波长转换时,控制层和控制层沿光的传播方向排列,并排列,并且相邻可变波长半导体激光器的有源层和控制层的排列相反半导体激光器到第二可变波长半导体激光器,在第一可变波长半导体激光器的操作期间,将电流注入到与第二可变波长半导体激光器相邻的第三可变波长半导体激光器(和第四可变波长半导体激光器)的控制层中r,然后在驱动第二个可变波长半导体激光器的同时停止向第三(和第四)个可变波长半导体激光器的控制层注入电流。

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