Computationally efficient nano-scale conductor resistance model

摘要

Disclosed is technology for evaluating the performance of various conducting structures in an integrated circuit. A three-dimensional circuit representation of a circuit design is provided. The three-dimensional circuit representation includes a plurality of conducting structures including a first conducting structure which has a length L. A plurality of longitudinally adjacent volume elements is identified in the conducting structure. A width W_n and a height H_n are estimated for each volume element n in the conducting structure. Furthermore, the local resistivity ρ_n for each volume element n is estimated based on a function that is dependent upon the length L of the conducting structure and the width W_n and height H_n of the volume element n. The resistance of a conducting structure is estimated in dependence upon the resistivity ρ_n for each of the volume elements n in the plurality of volume elements in the conducting structure.