A vapor phase growth rate measuring apparatus has an initial parameter setting adjuster to set initial values of fitting parameters, a refractive index of each thin film to be formed on the substrate, a growth rate of each thin film, and at least one parameter having temperature dependence, a film thickness calculator to calculate a film thickness of each thin film, a parameter selector to select a value in accordance with a growth temperature for the parameter, a reflectometer to measure a reflectance of the substrate, a reflectance calculator to calculate a reflectance of the substrate, an error calculator to calculate an error between the calculated reflectance and an actual measurement value of the reflectance measured at a plurality of times, a parameter changer to change at least a part of the values of the fitting parameters, and an output value generator to generate characteristic values of each thin film.
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