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Reticle optimization algorithms and optimal target design

机译:标线优化算法和最佳目标设计

摘要

Metrology target designs on the reticle and on the wafer, and target design and processing methods are provided. Target designs comprise coarse pitched periodic structures having fine pitched sub-elements, which vary in sub-element CD and/or height, an orthogonal periodic structure, perpendicular to the measurement direction, with an orthogonal unresolved pitch among periodically recurring bars, which provide a calibration parameter for achieving well-printed targets. Orthogonal periodic structures may be designed on the reticle and be unresolved, or be applied in cut patterns on the process layer, with relatively low sensitivity to the cut layer overlay. Designed targets may be used for overlay metrology as well as for measuring process parameters such as scanner aberrations and pitch walk.
机译:提供了掩模版和晶片上的计量目标设计,以及目标设计和处理方法。目标设计包括具有细斜度子元素的粗斜度周期性结构,这些子元素的子元素CD和/或高度各不相同;垂直于测量方向的正交周期性结构,周期性重复的条之间具有未解决的正交斜度,从而提供校准参数,以实现打印效果良好的目标。正交周期性结构可以被设计在标线板上并且未被解析,或者以切割图案被施加在处理层上,对切割层覆盖物的灵敏度相对较低。设计的目标可用于叠加计量以及测量过程参数,例如扫描仪像差和俯仰步移。

著录项

  • 公开/公告号US10754261B2

    专利类型

  • 公开/公告日2020-08-25

    原文格式PDF

  • 申请/专利权人 KLA-TENCOR CORPORATION;

    申请/专利号US201715571427

  • 发明设计人 YOEL FELER;VLADIMIR LEVINSKI;

    申请日2017-06-06

  • 分类号G03F7/20;G03F1/44;

  • 国家 US

  • 入库时间 2022-08-21 11:30:35

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