首页> 外国专利> Reticle Optimization Algorithms and Optimal Target Design

Reticle Optimization Algorithms and Optimal Target Design

机译:掩模版优化算法和最佳目标设计

摘要

Metrology target designs on reticle and wafer, and target design and processing methods are provided. Target designs are orthogonal periodic structures perpendicular to the measurement direction, having Coles pitch periodic structures with sub-element CD and / or fine pitch sub-elements varying in height, orthogonal unresolved pitch between periodically repeated bars. Which provides calibration parameters to achieve well printed targets. Orthogonal periodic structures may be designed on the reticle and not degraded, or may be applied in a cutting pattern on the process layer, with a relatively low sensitivity to the cutting layer overlay. Designed targets can be used to measure process parameters such as scanner aberrations and pitch walk as well as overlay metrology.
机译:提供了标线和晶圆上的计量目标设计,以及目标设计和处理方法。目标设计是垂直于测量方向的正交周期性结构,具有带子元素CD和/或细间距子元素的高度变化的Coles间距周期性结构,周期性重复的条之间的正交未解析间距。它提供校准参数以实现印刷效果良好的目标。正交周期性结构可以被设计在掩模版上并且不被降解,或者可以以切割图案被施加在处理层上,对切割层覆盖物的灵敏度相对较低。设计的目标可用于测量过程参数,例如扫描仪像差和俯仰步移以及叠加计量。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号