Electrostatic doping-based all GNR tunnel field-effect transistor

摘要

The present invention disclose an Electrostatic doping (ED)-based graphene nanoribbon (GNR) tunneling field-effect transistor (TFET) with tri-gate design. This device uses hydrogen-passivated GNR heterojunction as a carrier path way and functions as a power switch providing a switching speed of ^˜0.3 ps⁻¹ an I_ON/I_OFF ratio as high as 10¹⁴ with the on-state current in the order of 10³ μA/μm. This disclosed invention consists of two electrode, two electrode extensions, six metallic gate regions, and six dielectric regions.