Phase transition based resistive random-access memory

摘要

A method of switching a phase-change device (Device), including changing phase of the Device from a semiconducting 2H phase to a new 2H_d phase with a higher conductivity, the Device having an active material with a thickness including a phase transition material to thereby transition the Device from a high resistive state (HRS) to a low resistive state (LRS) by application of a set voltage and further to return the Device from the LRS back to the HRS by application of a reset voltage.