首页> 外国专利> Temperature compensation for silicon photomultiplier based detector

Temperature compensation for silicon photomultiplier based detector

机译:基于硅光电倍增管的探测器的温度补偿

摘要

A SiPM tile includes SiPM arrays on a detector die, each of the SiPM arrays including a first plurality of microcells and a second plurality of reference microcells dispersed on the die, each reference microcell including an optically-opaque mask, a readout circuit each including a respective charge sensitive amplifier (CSA) connected to one of the reference microcells, each CSA configured to accumulate the dark current of the reference microcell during a selected time window, a hybrid temperature control circuit configured to receive an output signal from each CSA, and to determine the real-time temperature of the die based on the received output signal, to provide the real-time temperature to a temperature compensation and correction control unit that adjusts a cooling/heating system flow provided to the die, the adjustment based on the real-time temperature. A method for compensating the operating temperature variation of the SiPM tile is also disclosed.
机译:SiPM磁贴包括位于检测器裸片上的SiPM阵列,每个SiPM阵列均包括散布在裸片上的第一组多个微单元和第二组多个参考微单元,每个参考微单元均包括不透光的掩模,一个读出电路,每个读出电路均包括一个各自的电荷敏感放大器(CSA),连接到参考微单元之一,每个CSA配置为在选定的时间窗口内累积参考微单元的暗电流,混合温度控制电路配置为从每个CSA接收输出信号,并且基于接收到的输出信号确定模具的实时温度,并将实时温度提供给温度补偿和校正控制单元,该温度补偿和校正控制单元调整提供给模具的冷却/加热系统流量,该调整基于实际时间温度。还公开了一种用于补偿SiPM砖的工作温度变化的方法。

著录项

  • 公开/公告号US10564299B2

    专利类型

  • 公开/公告日2020-02-18

    原文格式PDF

  • 申请/专利权人 GENERAL ELECTRIC COMPANY;

    申请/专利号US201615145380

  • 发明设计人 GENG FU;JIANJUN GUO;

    申请日2016-05-03

  • 分类号G01T1/24;G01T7;

  • 国家 US

  • 入库时间 2022-08-21 11:30:00

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号