首页>
外国专利>
Work function metal patterning for N-P spaces between active nanostructures using unitary isolation pillar
Work function metal patterning for N-P spaces between active nanostructures using unitary isolation pillar
展开▼
机译:使用单一隔离柱对有源纳米结构之间的N-P空间进行功函数金属图案化
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method includes forming an isolation pillar between first and second active nanostructures for adjacent FETs. When a first WFM surrounding the second active nanostructure is removed as part of a WFM patterning process, creating a discontinuity in the first metal. The pillar or the discontinuity in the first metal on the part of the pillar prevent the etching from reaching and removing the first WFM on the first active nanostructure. The isolation pillar creates a gate cut isolation in a selected gate region, and can be shortened in another gate region to allow for gate sharing between adjacent FETs.
展开▼