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Ternary content addressable memory with match line circuit for controlling potential of match realizing higher speed of search access
Ternary content addressable memory with match line circuit for controlling potential of match realizing higher speed of search access
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机译:具有匹配线电路的三进制内容可寻址存储器,用于控制匹配潜力,从而实现更高的搜索访问速度
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摘要
An object of the present disclosure is to provide a content addressable memory realizing higher speed of a search access. A content addressable memory includes: a plurality of memory cells; a match line coupled to the plurality of memory cells; a search line coupled to each of the plurality of memory cells; a match line output circuit coupled to the match line; and a potential changing circuit coupled to the match line and changing the potential of the match line.
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