首页> 外国专利> Analog neuromorphic circuits for dot-product operation implementing resistive memories

Analog neuromorphic circuits for dot-product operation implementing resistive memories

机译:用于点积运算的模拟神经形态电路,采用电阻式存储器

摘要

An analog neuromorphic circuit is disclosed having resistive memories that provide a resistance to each corresponding input voltage signal. Input voltages are applied to the analog neuromorphic circuit. Each input voltage represents a vector value that is a non-binary value included in a vector that is incorporated into a dot-product operation with weighted matrix values included in a weighted matrix. A controller pairs each resistive memory with another resistive memory. The controller converts each pair of resistance values to a single non-binary value. Each single non-binary value is mapped to a weighted matrix value included in the weighted matrix that is incorporated into the dot-product operation with the vector values included in the vector. The controller generates dot-product operation values from the dot-product operation with the vector and the weighted matrix where each dot-product operation is a non-binary value.
机译:公开了具有电阻存储器的模拟神经形态电路,该电阻存储器为每个对应的输入电压信号提供电阻。输入电压被施加到模拟神经形态电路。每个输入电压表示矢量值,该矢量值是包括在矢量中的非二进制值,该矢量被合并到点积运算中,并且加权矩阵值包括在加权矩阵中。控制器将每个电阻式存储器与另一个电阻式存储器配对。控制器将每对电阻值转换为单个非二进制值。将每个单个非二进制值映射到包含在加权矩阵中的加权矩阵值,该加权矩阵值与包含在矢量中的矢量值合并到点积运算中。控制器利用矢量和加权矩阵从点积运算生成点积运算值,其中每个点积运算均为非二进制值。

著录项

  • 公开/公告号US10789528B2

    专利类型

  • 公开/公告日2020-09-29

    原文格式PDF

  • 申请/专利权人 UNIVERSITY OF DAYTON;

    申请/专利号US201916506145

  • 申请日2019-07-09

  • 分类号G06N3/063;G11C11/54;G11C13;G06F17/10;G06N3/08;G06N3/04;

  • 国家 US

  • 入库时间 2022-08-21 11:29:25

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号