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High efficiency quantum dot sensitized thin film solar cell with absorber layer
High efficiency quantum dot sensitized thin film solar cell with absorber layer
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机译:具有吸收层的高效量子点敏化薄膜太阳能电池
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摘要
A photovoltaic (PV) device having a quantum dot sensitized interface includes a first conductor layer and a second conductor layer. At least one of the conductor layers is transparent to solar radiation. A quantum dot (nanoparticle) sensitized photo-harvesting interface comprises a photo-absorber layer, a quantum dot layer and a buffer layer, placed between the two conductors. The absorber layer is a p-type material and the buffer layer is an n-type material. The quantum dot layer has a tunable bandgap to cover infrared (IR), visible light and ultraviolet (UV) bands of solar spectrum.
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