Simple approach for preparing post-treatment-free solution processed non-stoichiometric NiO_x nanoparticles as conductive hole transport materials

摘要

High-quality noN-stoichiometric NiO_x nanoparticles are synthesized by a facile chemical precipitation method. The NiO_x film can function as an effective p-type semiconductor or hole transport layer (HTL) without any post-treatments, while offering wide temperature applicability from room-temperature to 150° C. For demonstrating the potential applications, high efficiency is achieved in organic solar cells using NiO_x HTL. Better performance in NiO_x based organic light emitting diodes is obtained as compared to devices using PEDOT:PSS. The solution-processed NiO_x semiconductors at room temperature can favor a wide-range of applications of large-area and flexible optoelectronics.