A quantum dot infrared detector includes a quantum dot-stacked structure in which quantum dot layers each containing quantum dots stacked on top of one another and intermediate layers. The quantum dots are sandwiched between the intermediate layers in the height direction of the quantum dots. The quantum dots have conduction band quantum confinement levels that include a conduction band ground level, a conduction band first excitation level at a higher energy position than the conduction band ground level, and a conduction band second excitation level at a higher energy position than the conduction band ground level. An energy gap between the conduction band first excitation level and the conduction band bottom of the intermediate layer and an energy gap between the conduction band second excitation level and the conduction band bottom of the intermediate layer are each smaller than twice thermal energy.
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