首页>
外国专利>
Dynamic adjustment of memory cell digit line capacitance
Dynamic adjustment of memory cell digit line capacitance
展开▼
机译:动态调整存储单元数字线电容
展开▼
页面导航
摘要
著录项
相似文献
摘要
Methods, systems, and devices for operating a ferroelectric memory cell or cells are described. A ferroelectric memory cell may be used to store a logic state. The capacitance of a digit line of the ferroelectric memory cell may be dynamically increased prior to, and during a portion of, a read operation used to determine a stored logic state of the cell. The capacitance may be increased by leveraging intrinsic capacitance of digit lines of the array—e.g., by shorting one digit line to another digit line. Increasing the capacitance of the digit line may increase the signal on the digit line that is sensed during the read operation.
展开▼