首页> 外国专利> Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus

Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus

机译:通过周期性沉积工艺在基板上形成含过渡金属的膜的方法,将过渡金属卤化物供应至反应室的方法以及相关的气相沉积设备

摘要

A method of forming a transition metal containing films on a substrate by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a transition metal halide compound comprising a bidentate nitrogen containing adduct ligand; and contacting the substrate with a second vapor phase reactant. A method for supplying a transition metal halide compound comprising a bidentate nitrogen containing ligand to a reaction chamber is disclosed, along with related vapor deposition apparatus.
机译:公开了一种通过周期性沉积工艺在基板上形成含过渡金属的膜的方法。该方法可以包括:使基材与第一气相反应物接触,该第一气相反应物包含过渡金属卤化物,该过渡金属卤化物化合物包含双齿含氮加合物。使衬底与第二气相反应物接触。公开了一种向反应室中供应包含双齿含氮配体的过渡金属卤化物的方法以及相关的气相沉积设备。

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