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Buffer Defense Band (BDB) Outside the Seal Ring to Enhance Crack Stopping in IC's

机译:密封圈外的缓冲防卫带(BDB)可以增强IC的裂纹阻止能力

摘要

A plurality of prime dies are fabricated on a wafer. A plurality of frame structures are fabricated in vertical scribe lines separating the prime dies from one another. A plurality of test structures are fabricated in horizontal scribe lines separating the prime dies from one another. A seal ring is fabricated surrounding each of the prime dies. A buffer defense band is provided on the outside of each seal ring and extending from the seal ring to all borders of each of the prime dies. The prime dies are diced on the vertical scribe lines and on the horizontal scribe lines wherein the buffer defense band improves the robustness of the IC packaging window to prevent any cracks, chipping, or delaminating originating from any horizontal or vertical scribe lines from propagating into any of the prime dies.
机译:在晶片上制造多个原模。在垂直划线上制造多个框架结构,这些划线将原模彼此分开。在水平划线上制造多个测试结构,这些划线将原模彼此分开。围绕每个原模制造密封环。在每个密封环的外侧设有缓冲带,从该密封环延伸到每个原模的所有边界。将原模在垂直划线和水平划线上切块,其中缓冲带提高了IC封装窗口的坚固性,从而防止了来自任何水平或垂直划线的裂纹,碎裂或分层蔓延到任何地方最初的死亡。

著录项

  • 公开/公告号US2020185337A1

    专利类型

  • 公开/公告日2020-06-11

    原文格式PDF

  • 申请/专利权人 DIALOG SEMICONDUCTOR (UK) LIMITED;

    申请/专利号US201816214966

  • 发明设计人 IVA KRASTEVA;YI-YEU LIN;

    申请日2018-12-10

  • 分类号H01L23;H01L23/31;H01L21/66;

  • 国家 US

  • 入库时间 2022-08-21 11:27:20

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