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Positive and negative full-range back-bias generator circuit structure

机译:正负全范围背偏置发生器电路结构

摘要

Embodiments of the disclosure provide a circuit structure for producing a full range biasing voltage including: a logic control node; first and second voltage generators, coupled to the logic control node, the first and second voltage generators configured to generate a positive voltage output at a positive voltage node and a negative voltage output at a negative voltage node; first and second multiplexer cells, coupled to the logic control node, configured to multiplex the positive voltage level received from the first or the second positive voltage node and the negative voltage level received from the first or the second negative voltage node to provide a multiplexed output; and an output node coupled to each of the first multiplexer cell and the second multiplexer cell configured to receive the multiplexed output to provide a biasing voltage range to at least one transistor having a back-gate terminal.
机译:本公开的实施例提供了一种用于产生全范围偏置电压的电路结构,包括:逻辑控制节点;以及第一和第二电压发生器,耦合到逻辑控制节点,第一和第二电压发生器被配置为产生在正电压节点处的正电压输出和在负电压节点处的负电压输出;第一和第二多路复用器单元,耦合到逻辑控制节点,配置为多路复用从第一或第二正电压节点接收的正电压电平和从第一或第二负电压节点接收的负电压电平以提供多路复用输出;输出节点,耦接至第一多路复用器单元和第二多路复用器单元中的每一个,被配置为接收多路复用的输出以向至少一个具有背栅端子的晶体管提供偏置电压范围。

著录项

  • 公开/公告号US10678287B2

    专利类型

  • 公开/公告日2020-06-09

    原文格式PDF

  • 申请/专利权人 GLOBALFOUNDRIES INC.;

    申请/专利号US201816159831

  • 发明设计人 ARIF A. SIDDIQI;JUHAN KIM;MAHBUB RASHED;

    申请日2018-10-15

  • 分类号G11C5/14;G05F3/20;

  • 国家 US

  • 入库时间 2022-08-21 11:26:49

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