首页> 外国专利> BROADBAND SEMICONDUCTOR-BASED UV LIGHT SOURCE FOR A SPECTRAL ANALYSIS DEVICE

BROADBAND SEMICONDUCTOR-BASED UV LIGHT SOURCE FOR A SPECTRAL ANALYSIS DEVICE

机译:用于光谱分析设备的基于宽带半导体的紫外光源

摘要

A semiconductor-based UV light source for a spectral analysis device is provided. The semiconductor-based UV light source includes a housing, in which at least one semiconductor-based emitter for emitting UV light is accommodated, and in which a beam path is formed between the semiconductor-based emitter and a beam exit point for a working beam. To provide a light source having a semiconductor-based emitter which is capable of covering at least a majority of the UV spectrum of 200 to 400 nm with its emission, the semiconductor-based emitter is designed to emit UV excitation light having an average wavelength in the range of 150 to 270 nm, and that a phosphor be provided in the beam path, which partially absorbs the UV excitation light and emits a phosphor radiation in such a way that UV excitation light and phosphor radiation are overlaid to form a working beam, which has a spectral bandwidth of at least 50 nm in the wavelength range of 200 to 400 nm.
机译:提供了一种用于光谱分析装置的基于半导体的UV光源。所述基于半导体的UV光源包括壳体,在该壳体中容纳至少一个用于发射UV光的基于半导体的发射器,并且在所述基于半导体的发射器和用于工作光束的光束出射点之间形成光束路径。 。为了提供一种具有半导体基发射器的光源,该半导体基发射器能够覆盖至少200至400 nm的大部分UV光谱,并且将其发射,设计为发射平均波长为200 nm的UV激发光。在150至270 nm的范围内,并且在光路中提供磷光体,该磷光体部分吸收UV激发光并发出磷光体辐射,使得UV激发光和磷光体辐射重叠以形成工作光束,在200至400 nm的波长范围内具有至少50 nm的光谱带宽。

著录项

  • 公开/公告号US2020256730A1

    专利类型

  • 公开/公告日2020-08-13

    原文格式PDF

  • 申请/专利权人 HERAEUS NOBLELIGHT GMBH;

    申请/专利号US201816647512

  • 发明设计人 CHRISTOPH SÖLLER;TORSTEN JENEK;

    申请日2018-08-22

  • 分类号G01J3/10;H01L33/50;F21K9/61;F21K9/64;F21K9/68;F21K9/69;

  • 国家 US

  • 入库时间 2022-08-21 11:26:31

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