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Method for the fabrication of indium-gallium nitride electrodes for electrochemical devices
Method for the fabrication of indium-gallium nitride electrodes for electrochemical devices
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机译:用于电化学装置的氮化铟镓电极的制造方法
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摘要
It is described a method for realizing catalytically active electrochemical electrodes with maximized surface area. In the method, InGaN is deposited epitaxially in form of a thin layer on a Silicon substrate exposing a (111) crystal fac, thus forcing the InGaN electrode material to grow exposing a catalytically active surface. The substrate is then removed, the InGaN layer is made into fragments and these are transferred onto a conductive support with one-, two- or three-dimensional structure which can be a wire, a two-dimensional conductive foil which, possibly folded, or a three-dimensional conductive fabric, sponge or cage-like structure. It is thus possible to obtain an InGaN-based electrode with increased surface area and exposing surfaces with high catalytic activity.
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