Embedded memory subsystems for a CNN based processing unit and methods of making

摘要

Embedded memory subsystems in a digital integrated circuit for artificial intelligence are disclosed. A semi-conductor substrate contains CNN processing units. Each CNN processing unit includes CNN logic circuits and an embedded memory subsystem. The memory subsystem includes first embedded memory and second embedded memory. The first embedded memory contains an array of MTJ STT-RAM cells with each cell has a circular planar area with a diameter in a range of 40-120 nm. The second embedded memory contains an array of MTJ STT-RAM cells with each cell has a circular planar area having a diameter in a range of 30-75 nm.