Forming stacked twin III-V nano-sheets using aspect-ratio trapping techniques
展开▼
机译:使用长宽比捕获技术形成堆叠的孪生III-V纳米片
展开▼
页面导航
摘要
著录项
相似文献
摘要
A semiconductor structure that includes: a substrate, a twin vertical punch-through stopper layer structure connected to the substrate, and a plurality of nanosheets connected to and supported by the twin vertical punch-through stopper structure and isolated from the substrate by an insulating dielectric.
展开▼