fabrication of a mask on an element comprising a substrate and a structured layer formed on the substrate, said structured layer comprising the two elements that will be suspended above the cavity, the mask being formed above the structured layer, said mask comprising openings with different sections, the openings being distributed in two zones, each zone comprising openings with the same section,anisotropic etching of the element so as to define the two depths under the two suspended elements in the substrate through the structured layer,isotropic etching of the element so as to make the cavity under the suspended elements."/> Method of fabricating a MEMS and/or NEMS structure comprising at least two elements suspended from a support at different distances from said support
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Method of fabricating a MEMS and/or NEMS structure comprising at least two elements suspended from a support at different distances from said support

机译:MEMS和/或NEMS结构的制造方法,所述MEMS和/或NEMS结构包括至少两个从所述支撑件悬置在与所述支撑件不同距离处的元件

摘要

Method of fabricating a microelectromechanical structure et comprising two elements suspended from a support, a cavity made in the support, said cavity having two different depths, including:fabrication of a mask on an element comprising a substrate and a structured layer formed on the substrate, said structured layer comprising the two elements that will be suspended above the cavity, the mask being formed above the structured layer, said mask comprising openings with different sections, the openings being distributed in two zones, each zone comprising openings with the same section,anisotropic etching of the element so as to define the two depths under the two suspended elements in the substrate through the structured layer,isotropic etching of the element so as to make the cavity under the suspended elements.
机译:一种制造微机电结构的方法,其包括从支撑件悬挂的两个元件,在支撑件中制成的腔,所述腔具有两个不同的深度,包括: 在包括基板和在基板上形成的结构化层的元件上制造掩模,所述结构化层包括将悬浮在空腔上方的两个元件,掩模形成在结构化层上方,包括具有不同部分的开口的掩模,所述开口分布在两个区域中,每个区域包括具有相同部分的开口, 元件的各向异性蚀刻,使得通过结构化层定义衬底中两个悬浮元素下方的两个深度, 各向同性刻蚀,以使衬底下方的空腔暂停的元素。

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