首页> 外国专利> DIELECTRIC RESONANT ANTENNA BASED NMOSFET TERAHERTZ DETECTOR AND METHOD

DIELECTRIC RESONANT ANTENNA BASED NMOSFET TERAHERTZ DETECTOR AND METHOD

机译:基于介电天线的NMOSFET TERAHERTZ探测器和方法

摘要

The present disclosure discloses a dielectric resonant antenna based NMOSFET terahertz detector, comprising an on-chip dielectric resonant terahertz antenna, wherein the on-chip dielectric resonant terahertz antenna is connected to a matching network, the matching network is connected to a source of an NMOSFET, and a gate of the NMOSFET is sequentially connected to a first bias resistor and a first bias voltage, a third transmission line is connected between the first bias resistor and the gate, a drain of the NMOSFET is connected to a first DC blocking capacitor, the other end of the first DC blocking capacitor is connected to a low noise preamplifier, a second bias resistor and a second bias voltage are connected in parallel between the first DC blocking capacitor and the low noise preamplifier, and the low noise preamplifier is further provided with a voltage feedback loop. The present disclosure also discloses a design method for the same.
机译:本公开内容公开了一种基于介电共振天线的NMOSFET太赫兹检测器,包括片上介电共振太赫兹天线,其中,所述片上介电共振太赫兹天线连接到匹配网络,所述匹配网络连接到NMOSFET的源极。 NMOSFET的栅极依次连接到第一偏置电阻和第一偏置电压,第三传输线连接在第一偏置电阻和栅极之间,NMOSFET的漏极连接到第一隔直电容,第一隔直电容器的另一端连接到低噪声前置放大器,第二偏置电阻和第二偏置电压并联连接在第一隔直电容器和低噪声前置放大器之间,并进一步提供低噪声前置放大器。带有电压反馈回路。本公开还公开了一种用于其的设计方法。

著录项

  • 公开/公告号US2020203843A1

    专利类型

  • 公开/公告日2020-06-25

    原文格式PDF

  • 申请/专利权人 GUANGDONG UNIVERSITY OF TECHNOLOGY;

    申请/专利号US201916297692

  • 发明设计人 JIANGUO MA;SHAOHUA ZHOU;

    申请日2019-03-10

  • 分类号H01Q13/18;H01Q1/22;H03F3/45;H01L23/66;G06F17/50;

  • 国家 US

  • 入库时间 2022-08-21 11:23:22

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