Room temperature GaN/AIGaN self-mixing terahertz detector enhanced by resonant antennas

摘要

This letter focuses on the fabrication and characterization of a terahertz detector integrated with a group of low pass filters and resonant antennas. The detector operates as a self-mixer on GaN/ AlGaN high electron mobility transistor (HEMT). At room temperature, a strong dc photocurrent is produced with the aid of the antennas and niters. The responsivity of our HEMT device is estimated to be 53 mA/W and a noise equivalent power of 1 nW/ Hz can be achieved at 300 K. In addition, the sensor properties of a similar HEMT detector without filter are tested as a comparison.