Redundant Memory Access For Rows Or Columns Containing Faulty Memory Cells In Analog Neural Memory In Deep Learning Artificial Neural Network

摘要

Numerous embodiments are disclosed for accessing redundant non-volatile memory cells in place of one or more rows or columns containing one or more faulty non-volatile memory cells during a program, erase, read, or neural read operation in an analog neural memory system used in a deep learning artificial neural network.